LSI Nytro Server-Side Flash Technology Enhances IBM System & Server Performance

LSI Corporation announced that IBM is now offering new versions of its High IOPS Modular Adapters family based on LSI Nytro WarpDrive technology. The new models join IBM’s growing stable of PCIe Flash cards and are designed to be used with the IBM System x server series to help clients speed Big Data analytics.

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LSI Nytro WarpDrive adapters provide ultra-low-latency, high-performance storage for data-intensive applications while helping cloud and enterprise datacenters shrink storage footprint and energy costs. The IBM High IOPS Modular Adapters based on LSI Nytro WarpDrive technology support capacity options ranging from 300GB to 800GB of SLC and MLC Flash memory for IBM System x servers.

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LSI Nytro WarpDrive adapters deliver:

§  IOPS performance of hundreds of hard disks with a single server

§  Enterprise-class flash performance, reliability and endurance from LSI SandForce Flash Storage Processors with DuraClass technology

§  Storage power, cooling and physical footprint savings, reducing total cost of ownership

§  Minimal CPU burden

§  Broad compatibility with existing infrastructures through use of standard drivers featuring extensive operating system and management support

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“Rapid data growth and rising application performance requirements have exposed the limitations of today’s aging storage architectures,” said Gary Smerdon, senior vice president and general manager, Accelerated Solutions Division, LSI. “IBM System x servers deployed with LSI Nytro WarpDrive technology can provide customers with a powerful, cost-effective performance boost for storing, accessing and analyzing data and, ultimately, give users the power to innovate the next generation of datacenters.”

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LSI Nytro WarpDrive technology is part of LSI’s comprehensive Nytro product portfolio of PCIe flash adapters, including the Nytro MegaRAID and Nytro XD product families. More information on the LSI Nytro application acceleration product portfolio is available at

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