Samsung Announces Mass Production of Industry’s First 20nm-based 8Gb DDR4 Memory for Enterprise Servers

Samsung Electronics Co., Ltd., a world-leading producer of memory devices, is announcing that it has begun mass production of the industry’s first and most advanced 8Gb DDR4 memory and 32GB modules. Both of these will be manufactured utilizing Samsung’s new 20-nm (nanometer) process technology, and are geared toward use in enterprise servers.

Samsung 20nm8GB DDR4 memory with hand

Using these new 8Gb DDR4 chips, Samsung initiated production of the 32GB registered dual in-line memory modules (RDIMM) earlier in October. These new modules boast a data transfer rate per pin that attains up to 2400 megabits per second (Mbps), delivering just under a 30% increase in performance. Compare this to the 1866 Mbps of previous DDR3 server memory modules.

Samsung 20nm 8GB DDR4 angled

According to Jeeho Baek, Vice President of Memory Marketing for Samsung Electronics, “Our new 20nm 8Gb DDR4 DRAM more than meets the high performance, high density and energy efficiency needs that are driving the proliferation of next-generation enterprise servers. By expanding the production of our 20nm DRAM line-ups, we will provide premium, high-density DRAM products, while handling increasing demand from customers in the global premium enterprise market.”

Samsung DDR4 memory chart

The new 8Gb DDR4 allows Samung to offer a complete line-up of 20nm-based DRAM products, leading a new era of 20nm DRAM efficiency, including 20nm 4Gb DDR3 for the PC market and 20nm 6Gb LPDDR3 for the mobile device market. The newest high density DDR4 also features improved error correction capabilities, increasing memory reliability in enterprise server design. Also, the latest DDR4 chip and module both use only 1.2 volts, which is currently the lowest proven reliable possible voltage.

Sasmung DDR4 error correction

Beyond Samsung’s latest 32GB modules, the new 8Gb chips will enable production of server memory modules with a maximum capacity of 128GB. This will be achieved by utilizing 3D through silicon via (TSV) technology, encouraging additional expansion of the high-density DRAM market.


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